(China (Mainland))
Product Summary
The BLF177 is a power MOS transistor. Its applications inclulde designed for industrial and military applications in the HF/VHF frequency range.
Parametrics
BLF177 absolute maximum ratings: (1)VDS: 125V; (2)VGS: ±20V; (3)ID: 16A; (4)Ptot: 220W; (5)tstg: -65 to 150℃; (6)tj: 200℃.
Features
BLF177 features: (1)high power gain; (2)low intermodulation distortion; (3)easy power control; (4)good thermal stability; (5)Withstands full load mismatch.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 BLF177 |
Advanced Semiconductor, Inc. |
Transistors RF MOSFET Power RF Transistor |
Data Sheet |
|
|
||||||||||||
 |
BLF177,112 |
NXP Semiconductors |
Transistors RF MOSFET Power RF DMOS 150W HF-VHF |
Data Sheet |
|
|
||||||||||||
|
BLF177C |
NXP Semiconductors |
Transistors RF MOSFET Power VDMOS TNS |
Data Sheet |
Negotiable |
|
||||||||||||
|
BLF177C,112 |
NXP Semiconductors |
Transistors RF MOSFET Power VDMOS TNS |
Data Sheet |
Negotiable |
|
||||||||||||
|
BLF177CR |
NXP Semiconductors |
Transistors RF MOSFET Power VDMOS TNS |
Data Sheet |
Negotiable |
|
||||||||||||
|
BLF177CR,112 |
NXP Semiconductors |
Transistors RF MOSFET Power VDMOS TNS |
Data Sheet |
Negotiable |
|
||||||||||||
